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AlGaAs SP4T PIN Diode Switch
V 1.00
MA4AGSW4
Features
Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 1.0 dB Insertion Loss, 32 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation n M/A-COM's unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n Polymide Scratch protection
n n n n
MA4AGSW4 Layout
Description
M/A-COM's MA4AGSW4 is an Aluminum-Gallium-Arsenide anode enhanced, SP4T PIN diode switch. AlGaAs anodes, which utilize M/A-COM's patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode airbridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility.
Absolute Maximum Ratings1 @ TA = +25 C (Unless otherwise specified)
Parameter Operating Temperature Storage Temperature Incident C.W. RF Power Maximum Rating -55 C to +125 C -65 C to +150 C + 23 dBm C. W. 25 V +/- 30 mA
Applications
The low capacitance of the PIN diodes used makes it ideal for use in microwave multi-throw switch designs, where the series capacitance in each off-arm will load the input. Also, the low series resistance of the diodes helps the total insertion loss of the devices at microwave frequencies. These AlGaAs PIN switches are used as the switching arrays for radar systems, radiometers, and other multi-assembly components.
Reverse Voltage Bias Current
1. Exceeding any of these values may result in permanent damage
Nominal Chip Dimensions
Chip Dimensions (m) X 1725 Pad Dimensions (m) X 100 Y 1530 Y 100
Chip
RF
J1 J2 J3 J4 J5
Pad Locations (m) X Y 0 0 -736 +506 -511 +1277 -511 +1277 +736 +506 Pad Locations Relative to J1
AlGaAs SP4T PIN Diode Switch Electrical Specifications @ TA = 25 C, +/- 10 mA Bias Current (On-Wafer Measurements)
RF Specifications Parameters
Insertion Loss Isolation Input Return Loss Output Return Loss Switching Speed
MA4AGSW4
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Frequency
0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 10 GHz
Minimum
25 25 10 10 10 10 -
Typical
0.7 1.0 41 32 21 22 26 17 20
Maximum
0.8 1.4 -
Units
dB dB dB dB ns
NOTES: 1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 20 ns rise and fall times.
Typical Driver Connections
Control Level (DC Current) J2
-10 mA +10 mA +10 mA +10 mA
RF Output Conditions J5
+10 mA +10 mA +10 mA -10 mA
J3
+10 mA -10 mA +10 mA +10 mA
J4
+10 mA +10 mA -10 mA +10 mA
J2-J1
Low Loss Isolation Isolation Isolation
J3-J1
Isolation Low Loss Isolation Isolation
J4-J1
Isolation Isolation Low Loss Isolation
J5-J1
Isolation Isolation Isolation Low Loss
2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
AlGaAs SP4T PIN Diode Switch Microwave and Millimeter Wave Performance
MA4AGSW4
V 1.00
TYPICAL INSERTION LOSS @ -10 mA
0 -0.5 IL ( dB ) -1 -1.5 -2 0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz ) J3 & J4 J2 & J5
TYPICAL ISOLATION @ +10 mA
0 -10 -20 -30 -40 -50 -60 -70 -80 0.00
IL ( dB )
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz ) J3 & J4 J2 & J5
3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
AlGaAs SP4T PIN Diode Switch Microwave and Millimeter Wave Performance (cont'd)
MA4AGSW4
V 1.00
TYPICAL INPUT RETURN LOSS @ -10 mA
0 -5 -10 -15 -20 -25 -30 -35 -40 0.00
IRL ( dB )
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz ) J3 & J4 J2 & J5
TYPICAL OUTPUT RETURN LOSS @ -10 mA
0 -5 -10 -15 -20 -25 -30 -35 -40 0.00
IRL ( dB )
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz ) J3 & J4 J2 & J5
4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
AlGaAs SP4T PIN Diode Switch Assembly Considerations
The following precautions should be observed to avoid damaging these chips.
MA4AGSW4
V 1.00
Solder Die Attachment
All die attach and bonding methods should be compatible with gold metal. Solder which does not scavange gold, such as 80Au/20Sn or Sn62/Pb36/Ag2 is recommended. Do not expose die to a temperature greater than 300 C for more than 10 seconds.
Cleanliness
These chips should be handled in a clean environment. Do not attempt to clean die after installation.
Electrically Conductive Epoxy Die Attachment
Assembly can be preheated to approximately 125 C. Use a controlled thickness of approximately 2 mils for best electrical and thermal conductivity. Cure epoxy as per manufacturer's schedule. For extended cure times, temperatures should be kept below 150 C.
Electro-Static Sensitivity
These Devices are considered ESD Class1. Proper ESD techniques should be used when handling these devices.
General Handling
The protective polymer coating on the active areas of these die provides scratch and impact protection, particularly for the metal airbridge which contacts the diode's anode. Die should primarily be handled with vacuum pickups, or alternatively with plastic tweezers.
Ribbon/Wire Bonding
Wedge thermocompression bonding or ball bonding may be used to attach ribbons or wires to the RF bonding pads. Gold ribbons should be 1/4 x 3 mil sq. for all RF ports for lowest inductance and best microwave performance.
Mounting Techniques
These AlGaAs devices are designed to be mounted with electrically conductive silver epoxy or with a lower temperature solder perform, which is not rich in Sn content.
Operation of the MA4AGSW4
The Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the Remaining Isolated Ports achieves operation of the MA4AGSW Series of AlGaAs PIN Switches. The Backside Area of the Die is the RF and DC Return Ground Plane. The DC Return is achieved on Common Port J1. Constant Current Sources should supply the DC Control Currents. The Diode voltages at these Bias Nodes will not exceed + 1.6 volts ( + 1.4 volts typical for Supply Currents up to + 30 mA). In the Low Loss State, the Series Diode must be Forward Biased and the Shunt Diode Reverse Biased. For All the Isolated Ports, the Shunt Diode is Forward Biased and the Series Diode is Reverse Biased. The Bias Network Design should yield > 30 dB RF to DC Isolation. Best Insertion Loss, P1dB, IP3, and Switching Speed is Achieved by using a Voltage Pull-up Resistor in the DC Return Path, (J1). A Minimum Value of | -2 V | is recommended at this Return Node, which is achievable with a Standard, + 5 V TTL Controlled PIN Diode Driver.
5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
AlGaAs SP4T PIN Diode Switch MA4AGSW4 Schematic with 2-18 GHz Bias Network
MA4AGSW4
V 1.00
J1
39 pF
22 pF
22 nH 100 Ohms DC Bias DC Bias
39 pF
22 nH
22 nH
39 pF
J5
22 pF
22 pF
J2
J4
J3
AlGaAs Switch Die
6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

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